Raman spectroscopy of mono- and bi-layer boron-doped graphene
graphene; Raman; phonons; defects; boron; bands.
Graphene’s exceptional physical properties make it a promising material for a wide range of applications. Doping is a
key strategy to tailor its electronic and optical characteristics, with boron doping (p-type) offering new opportunities for
both fundamental studies and technological advancements. In this work, we investigate the Raman spectral features of
boron-doped monolayer and bilayer graphene under multiple laser excitations. Our analysis focuses on phonon behavior,
electronic structure modifications, and interlayer electron scattering in bilayer graphene, including the extraction of the
hopping parameter. Preliminary results reveal asymmetry in the D band due to anisotropic defect distributions, the
emergence of the Kohn anomaly under 633 nm excitation. These findings provide insights into the fundamental
interactions governing doped graphene systems and contribute to the development of tailored 2D materials for electronic
and optoelectronic applications.